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| IPB110N06L G IPP110N06L G OptiMOS(R) Power-Transistor Features * For fast switching converters and sync. rectification * N-channel enhancement - logic level * 175 C operating temperature * Avalanche rated * Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMD version 60 11 78 V m A Type IPB110N06L G IPP110N06L G Type IPB110N06L G Package IPP110N06L G Marking Package PG-TO263-3-2 P-TO263-3-2 110N06L P-TO220-3-1 Marking PG-TO220-3-1 110N06L 110N06L 110N06L Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 78 55 312 280 6 20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 C1) I D=78 A, R GS=25 I D=78 A, V DS=48 V, di /dt =200 A/s, T j,max=175 C mJ kV/s V W C T C=25 C 158 -55 ... 175 55/175/56 See figure 3 Rev. 1.0 page 1 2006-05-04 IPB110N06L G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area2) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=94 A V DS=60 V, V GS=0 V, T j=25 C V DS=60 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=60 V V GS=10 V, I D=78 A V GS=4.5 V, I D=52 A V GS=10 V, I D=78 A, SMD version V GS=4.5 V, I D=52 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=78 A 47 60 1.2 1.6 0.01 Values typ. IPP110N06L G Unit max. 0.95 62 40 K/W 2 1 V A - 1 100 - 1 8.5 10.9 8.2 100 11 15 11.0 nA m 10.6 1.9 93 14.7 S Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 2) Rev. 1.0 page 2 2006-05-04 IPB110N06L G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics3) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 3) IPP110N06L G Unit max. Values typ. C iss C oss C rss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=78 A, R G=3 V GS=0 V, V DS=30 V, f =1 MHz - 2000 470 120 8 19 45 18 2700 630 180 13 29 68 27 pF ns Q gs Q g(th) Q gd Q sw Qg V plateau Q oss V DD=30 V, V GS=0 V V DD=30 V, I D=78 A, V GS=0 to 10 V - 8 3 20 25 59 4.0 19 11 4 30 36 79 25 nC V IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=78 A, T j=25 C V R=30 V, I F=I S, di F/dt =100 A/s - 0.98 54 61 78 312 1.3 67 76 A V ns nC See figure 16 for gate charge parameter definition Rev. 1.0 page 3 2006-05-04 IPB110N06L G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V IPP110N06L G 180 160 140 120 90 80 70 60 50 40 30 20 10 0 0 50 100 150 200 0 50 100 150 200 P tot [W] 80 60 40 20 0 T C [C] I D [A] 100 T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 limited by on-state resistance 10 s 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 100 1 s 0.5 102 DC 100 s 0.2 1 ms Z thJC [K/W] I D [A] 0.1 101 10 ms 10-1 0.05 0.02 0.01 single pulse 10 0 10-1 10 -1 10-2 10 0 10 1 10 2 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.0 page 4 2006-05-04 IPB110N06L G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 200 10 V 5.5 V 5V IPP110N06L G 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 20 3.5 V 4V 4.5 V 150 4.5 V 15 5V R DS(on) [m] I D [A] 100 4V 10 5.5 V 10 V 50 3.5 V 5 3V 0 0 1 2 3 4 5 0 0 40 80 120 160 200 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 100 8 Typ. forward transconductance g fs=f(I D); T j=25 C 120 80 100 80 60 g fs [S] 40 20 175 C 25 C I D [A] 60 40 20 0 0 1 2 3 4 5 0 0 40 80 120 160 V GS [V] I D [A] Rev. 1.0 page 5 2006-05-04 IPB110N06L G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=78 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 35 3 IPP110N06L G 30 2.5 25 2 R DS(on) [m] V GS(th) [V] 20 940 A 1.5 94 A 15 98 % 1 10 typ 5 0.5 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 103 Ciss 102 103 Coss 25 C 175 C 175C 98% C [pF] I F [A] 101 25C 98% Crss 10 2 100 101 0 10 20 30 40 50 10-1 0 0.5 1 1.5 2 V DS [V] V SD [V] Rev. 1.0 page 6 2006-05-04 IPB110N06L G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 102 IPP110N06L G 14 Typ. gate charge V GS=f(Q gate); I D=78 A pulsed parameter: V DD 12 25 C 100 C 150 C 10 12V 30 V 48 V 8 101 V GS [V] 100 101 102 103 I AV [A] 6 4 2 100 0 0 20 40 60 80 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 75 V GS Qg 70 V BR(DSS) [V] 65 60 V g s(th) 55 Q g (th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q gate 50 T j [C] Rev. 1.0 page 7 2006-05-04 IPB110N06L G PG-TO-263 (D-Pak) IPP110N06L G Rev. 1.0 page 8 2006-05-04 IPB110N06L G PG-TO220-3: Outline IPP110N06L G Rev. 1.0 page 9 2006-05-04 IPB110N06L G IPP110N06L G Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 10 2006-05-04 |
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